基于GIS单线图的配网停电单模拟操作应用研究

配电网停电会造成电力系统供配电可靠性以及服务质量下降,研究基于地理信息系统(GIS)单线图的配网停电单模拟操作应用。利用网格长度作为基本单位建立坐标系,以选取起始点与终止点为基础,通过四参数法将GIS坐标映射至图纸网格内,实现配网内设备初步布局,将杆塔、站房和整体均匀分布作为优化目标,设置多目标优化目标函数实现GIS单线图最终优化。选取某电力公司配网作为单模拟操作应用对象,模拟结果表明,单模拟操作配网停电后,该配网各负荷点年故障率、次平均停电时间以及年停电时间均有所减少,可有效提升配网的供配电可靠性。     

Single Cell Bioprinting with Ultrashort Laser Pulses

Tissue engineering requires the precise positioning of mammalian cells and biomaterials on substrate surfaces or in preprocessed scaffolds. Although the development of 2D and 3D bioprinting technologies has made substantial progress in recent years, precise, cell-friendly, easy to use, and fast technologies for selecting and positioning mammalian cells with single cell precision are still in need. A new laser-based bioprinting approach is therefore presented, which allows the selection of individual cells from complex cell mixtures based on morphology or fluorescence and their transfer onto a 2D target substrate or a preprocessed 3D scaffold with single cell precision and high cell viability (93–99% cell survival, depending on cell type and substrate). In addition to precise cell positioning, this approach can also be used for the generation of 3D structures by transferring and depositing multiple hydrogel droplets. By further automating and combining this approach with other 3D printing technologies, such as two-photon stereolithography, it has a high potential of becoming a fast and versatile technology for the 2D and 3D bioprinting of mammalian cells with single cell resolution.     

On the Catalytic Activity of Sn Monomers and Dimers at Graphene Edges and the Synchronized Edge Dependence of Diffusing Atoms in Sn Dimers

In this study, in situ transmission electron microscopy is performed to study the interaction between single (monomer) and paired (dimer) Sn atoms at graphene edges. The results reveal that a single Sn atom can catalyze both the growth and etching of graphene by the addition and removal of C atoms respectively. Additionally, the frequencies of the energetically favorable configurations of an Sn atom at a graphene edge, calculated using density functional theory calculations, are compared with experimental observations and are found to be in good agreement. The remarkable dynamic processes of binary atoms (dimers) are also investigated and is the first such study to the best of the knowledge. Dimer diffusion along the graphene edges depends on the graphene edge termination. Atom pairs (dimers) involving an armchair configuration tend to diffuse with a synchronized shuffling (step-wise shift) action, while dimer diffusion at zigzag edge terminations show a strong propensity to collapse the dimer with each atom diffusing in opposite directions (monomer formation). Moreover, the data reveals the role of C feedstock availability on the choice a single Sn atom makes in terms of graphene growth or etching. This study advances the understanding single atom catalytic activity at graphene edges.     

Optical properties of gadolinia-doped cubic yttria stabilized zirconia single crystals

Cubic zirconia single crystals stabilized with yttria and doped with Gd₂O₃ (0.10–5.00 mol%) were prepared by the optical floating zone method, and characterized by a combination of X-ray diffraction (XRD), and Raman, electron paramagnetic resonance (EPR), ultraviolet–visible (UV–Vis), photoluminescence excitation (PLE) and photoluminescence (PL) spectroscopic techniques. XRD and Raman spectroscopy showed that the crystal samples were all in the cubic phase, whereas the ceramic sample consisted of a mixture of monoclinic and cubic phases. The absorption spectrum showed four peaks at 245, 273, 308, and 314 nm in the ultraviolet region, and the optical band gap differed between samples with ≤3.00 mol% and those with >3.00 mol% Gd₂O₃. The emission spectrum showed a weak peak at 308 nm and a strong peak at 314 nm, which are attributed to the ⁶P_5/2 → ⁸S_7/2 and ⁶P_7/2 → ⁸S_7/2 transitions of Gd³⁺, respectively. The intensities of the peaks in the excitation and emission spectra increased with Gd³⁺ concentration, reached a maximum at 2.00 mol%, then decreased with higher concentrations. This quenching is considered to be the result of the electric dipole-dipole interactions, and this interpretation is supported by the Gd³⁺ EPR spectra, which showed progressive broadening with increasing Gd³⁺ concentration throughout the concentration range investigated.     

Effect of electric field intensity on domain kinetics of Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 single crystal

As one of the outstanding piezoelectric materials, relaxor-PbTiO₃ single crystal also exhibits promising electro-optic and nonlinear-optic properties. Therefore, it is vital to understand the domain switching kinetics not only for optimizing strain-mediated devices performance but also for fabricating optical waveguides and periodic domain structures in optical applications. In this work, domain switching kinetics in annealed and pre-poled PMN-0.38PT single crystal under different external electric field were studied. Polarization reversal can be accomplished only by c-domain nucleation and growth in the annealed sample where the formation of the ferroelastic domains is hindered. In pre-poled sample, 90° domain switching happened by 90° domain wall reorientation under low electric field while 180° domain switching is accomplished by two-step 90° domain switching and c-domain growth under high electric field. The results are important for modulating domain structure for strain mediated and optical devices.     

Suppression of forced vibration due to chip segmentation in ultrasonic elliptical vibration cutting of titanium alloy Ti–6Al–4V

Ultrasonic elliptical vibration cutting of titanium alloy Ti–6Al–4V is investigated in this research. Because products made of Ti–6Al–4V alloy are usually designed for possessing low-rigidity structures or good-quality cut surfaces, machining requirements such as low cutting forces and slow rate of tool wear need to be fulfilled for realization of their precision machining. Therefore, the ultrasonic elliptical vibration cutting is applied as a novel machining method for those products. Machinability of Ti–6Al–4V alloy by the ultrasonic elliptical vibration cutting with cemented carbide tools is examined to figure out suitable cutting conditions for precision machining of Ti–6Al–4V alloy. As experimental results, generated chips, cutting forces, and profiles of cut surfaces are indicated. A forced vibration problem occurred due to the segmented chip formation, which is also well-known in the ordinary non-vibration cutting. Therefore, characteristics of the forced vibration due to the chip segmentation are investigated in this research. Through the experiments, it is found that the frequency and magnitude of the forced vibration have relation with the average uncut chip thickness and cutting width. Especially, it is found that the averaging effect can suppress the forced vibration, i.e. the chip segmentation tends to occur randomly over the large cutting width, and hence the force fluctuations with random phases tend to cancel each other as the cutting width increases relatively against the average uncut chip thickness. Based on the investigations, a new practical strategy to suppress the forced vibration due to chip segmentation is proposed and verified. Using the proposed method significantly decreased cutting forces and good quality of surfaces are obtained when the forced vibration is suppressed compared to the ordinary non-vibration cutting results. Therefore, the results suggest that the precision machining can be realized without sacrificing the machining efficiency by increasing the width of cut and decreasing the average uncut chip thickness.     

All two-input logic gates by a single-stage single electron box

In this paper, the design of all two-input logic gates is presented by only a single-stage single electron box (SEB) for the first time. All gates are constructed based on a same circuit. We have used unique periodic characteristics of SEB to design these gates and present all two-input logic gates (monotonic/non-monotonic, symmetric/non-symmetric) by a single-stage design. In conventional monotonic devices, such as MOSFETs, implementing non-monotonic logic gates such as XOR and XNOR is impossible by only a single-stage design, and a multistage design is required which leads to more complexity, higher power consumption and less speed of the gates. We present qualitative design at first and then detailed designs are investigated and optimised by using our previous works. All designs are verified by a single electron simulator which shows correct operation of the gates.     

Strain-rate dependence of surface/subsurface deformation mechanisms during nanoscratching tests of GGG single crystal

Constant- and varied-depth nanoscratching tests of GGG single crystal were carried out at different scratching velocities. The morphologies of the scratched grooves and chips were analysed using scanning electron microscope. The experimental results indicated that higher scratching velocity led to shallower penetration depth, shallower residual depth, and larger continuous chips. Increasing the scratching velocity could effectively improve the plasticity and reduce the brittle-to-ductile transition depth of GGG single crystal. Based on the contact stress and contact area between the analysed sample and Berkovich indenter, a model for predicting the penetration depth was developed, which took into account the strain rate effect and elastic recovery of materials. The model was verified using constant- and varied-depth nanoscratching tests, and the predicted and experimental results were in good agreement. Subsurface damage underneath the ductile surface was characterised using transmission electron microscope. The TEM results demonstrated that higher scratching velocity led to the slipping planes appearing in more directions, which prevented the generation of long slipping plane and reduced the depth of the damage layers. The plastic deformation of GGG at the scratching velocity of 100 μm/s was dominated by poly-crystalline nanocrystallites and amorphous phases, and was similar to that at the low scratching velocity. This study provided a fundamental understanding of the strain-rate dependence of surface/subsurface deformation mechanisms of GGG during ultra-precision machining.     

Application of adhesively bonded single lap joints for fracture assessment of adhesive materials

In this study, a method has been proposed to obtain the failure envelope of brittle adhesives using the experimental failure loads of precracked single lap joints (SLJs). The proposed technique is based on the principles of linear elastic fracture mechanics (LEFM), on J-integral relations, and on results of a numerical analysis. Compared to the previous approaches, the introduced experimental method has some advantages such as low manufacturing costs and simpler test procedure. The proposed method can also provide a wide range of mode mix ratios without the need of an additional apparatus. The fracture envelope obtained from the proposed method was then verified by performing some fracture tests including double cantilever beam (DCB), end-notched flexure (ENF), and single leg bending (SLB) specimens. Good correlation was seen between the fracture envelopes of the proposed method and the ones obtained from the fracture mechanics experiments.